BSS123NH63

BSS123NH6327XT vs BSS123NH6327 vs BSS123NH6327S

 
PartNumberBSS123NH6327XTBSS123NH6327BSS123NH6327S
DescriptionMOSFET N-Ch 100V 190mA SOT-23-3190 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current190 mA--
Rds On Drain Source Resistance2.4 Ohms--
Vgs th Gate Source Threshold Voltage800 mV--
Vgs Gate Source Voltage20 V--
Qg Gate Charge900 pC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation500 mW (1/2 W)--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel--
Height1.1 mm--
Length2.9 mm--
Transistor Type1 N-Channel--
Width1.3 mm--
BrandInfineon Technologies--
Forward Transconductance Min410 mS--
Fall Time22 ns--
Product TypeMOSFET--
Rise Time3.2 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time7.4 ns--
Typical Turn On Delay Time2.3 ns--
Part # AliasesBSS123N BSS123NH6327XTSA1 H6327 SP000870646--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSS123NH6327XTSA1 MOSFET N-Ch 100V 190mA SOT-23-3
BSS123NH6327XT MOSFET N-Ch 100V 190mA SOT-23-3
BSS123NH6327XTSA1 MOSFET N-CH 100V 0.19A SOT-23
BSS123NH6327 190 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
BSS123NH6327S New and Original
BSS123NH6327XTSA1INFINEO New and Original
BSS123NH6327XTSA1-CUT TAPE New and Original
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