BSS123NH6327X

BSS123NH6327XTSA1 vs BSS123NH6327XT vs BSS123NH6327XTSA1-CUT TAPE

 
PartNumberBSS123NH6327XTSA1BSS123NH6327XTBSS123NH6327XTSA1-CUT TAPE
DescriptionMOSFET N-Ch 100V 190mA SOT-23-3MOSFET N-Ch 100V 190mA SOT-23-3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current190 mA190 mA-
Rds On Drain Source Resistance6 Ohms2.4 Ohms-
Vgs th Gate Source Threshold Voltage800 mV800 mV-
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge0.6 nC900 pC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation500 mW (1/2 W)500 mW (1/2 W)-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length2.9 mm2.9 mm-
SeriesBSS123--
Transistor Type1 N-Channel1 N-Channel-
Width1.3 mm1.3 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time22 ns22 ns-
Product TypeMOSFETMOSFET-
Rise Time3.2 ns3.2 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time7.4 ns7.4 ns-
Typical Turn On Delay Time2.3 ns2.3 ns-
Part # AliasesBSS123N BSS123NH6327XT H6327 SP000870646BSS123N BSS123NH6327XTSA1 H6327 SP000870646-
Unit Weight0.000282 oz0.000282 oz-
Forward Transconductance Min-410 mS-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSS123NH6327XTSA1 MOSFET N-Ch 100V 190mA SOT-23-3
BSS123NH6327XT MOSFET N-Ch 100V 190mA SOT-23-3
BSS123NH6327XTSA1 MOSFET N-CH 100V 0.19A SOT-23
BSS123NH6327XTSA1INFINEO New and Original
BSS123NH6327XTSA1-CUT TAPE New and Original
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