BSS123W

BSS123W vs BSS123W-7-F vs BSS123W-7

 
PartNumberBSS123WBSS123W-7-FBSS123W-7
DescriptionMOSFET 100V NCH ENHANCEMENT MODE TRANSISTORMOSFET 100V 200mWMOSFET N-CH 100V 170MA SC70-3
ManufacturerON SemiconductorDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3SOT-323-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current170 mA170 mA-
Rds On Drain Source Resistance10 Ohms6 Ohms-
Vgs th Gate Source Threshold Voltage800 mV--
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation200 mW200 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1 mm1 mm-
Length2 mm2.2 mm-
SeriesBSS123WBSS123W-
Transistor Type1 N-Channel1 N-Channel-
Width1.25 mm1.35 mm-
BrandON Semiconductor / FairchildDiodes Incorporated-
Forward Transconductance Min80 mS0.08 S, 0.37 S-
Fall Time5.73 ns8 ns-
Product TypeMOSFETMOSFET-
Rise Time1.24 ns8 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time8.4 ns13 ns-
Typical Turn On Delay Time2.94 ns8 ns-
Unit Weight0.000176 oz0.000176 oz-
Product-MOSFET Small Signal-
Type-Enhancement Mode Field Effect Transistor-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
BSS123W MOSFET 100V NCH ENHANCEMENT MODE TRANSISTOR
Diodes Incorporated
Diodes Incorporated
BSS123W-7-F MOSFET 100V 200mW
ON Semiconductor
ON Semiconductor
BSS123W MOSFET N-CH 100V 0.17A SOT-323
BSS123W-7 MOSFET N-CH 100V 170MA SC70-3
BSS123W-7-F Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-323 T/R
BSS123WQ New and Original
BSS123W-7-F-CUT TAPE New and Original
BSS123WQ-7-F Trans MOSFET N-CH 100V 170A Automotive 3-Pin SOT-323 T/R
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