PartNumber | BSS123W | BSS123W-7-F | BSS123W-7 |
Description | MOSFET 100V NCH ENHANCEMENT MODE TRANSISTOR | MOSFET 100V 200mW | MOSFET N-CH 100V 170MA SC70-3 |
Manufacturer | ON Semiconductor | Diodes Incorporated | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-323-3 | SOT-323-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 170 mA | 170 mA | - |
Rds On Drain Source Resistance | 10 Ohms | 6 Ohms | - |
Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 200 mW | 200 mW | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Height | 1 mm | 1 mm | - |
Length | 2 mm | 2.2 mm | - |
Series | BSS123W | BSS123W | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 1.25 mm | 1.35 mm | - |
Brand | ON Semiconductor / Fairchild | Diodes Incorporated | - |
Forward Transconductance Min | 80 mS | 0.08 S, 0.37 S | - |
Fall Time | 5.73 ns | 8 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 1.24 ns | 8 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 8.4 ns | 13 ns | - |
Typical Turn On Delay Time | 2.94 ns | 8 ns | - |
Unit Weight | 0.000176 oz | 0.000176 oz | - |
Product | - | MOSFET Small Signal | - |
Type | - | Enhancement Mode Field Effect Transistor | - |