PartNumber | BSS138PW,115 |
Description | MOSFET N-CH 60 V 320 mA |
Manufacturer | Nexperia |
Product Category | MOSFET |
RoHS | Y |
Technology | Si |
Mounting Style | SMD/SMT |
Package / Case | SOT-323-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V |
Id Continuous Drain Current | 320 mA |
Rds On Drain Source Resistance | 1.6 Ohms |
Vgs th Gate Source Threshold Voltage | 900 mV |
Vgs Gate Source Voltage | 10 V |
Qg Gate Charge | 0.72 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd Power Dissipation | 310 mW |
Configuration | Single |
Channel Mode | Enhancement |
Qualification | AEC-Q101 |
Packaging | Reel |
Product | MOSFET Small Signal |
Transistor Type | 1 N-Channel Trench MOSFET |
Brand | Nexperia |
Fall Time | 4 ns |
Product Type | MOSFET |
Rise Time | 3 ns |
Factory Pack Quantity | 3000 |
Subcategory | MOSFETs |
Typical Turn Off Delay Time | 9 ns |
Typical Turn On Delay Time | 2 ns |
Unit Weight | 0.000176 oz |