BSS209P

BSS209PWH6327XTSA1 vs BSS209PW L6327 vs BSS209PW

 
PartNumberBSS209PWH6327XTSA1BSS209PW L6327BSS209PW
DescriptionMOSFET P-Ch -20V -630mA SOT-323-3MOSFET P-Ch -20V 580mA SOT-323-3MOSFET P-CH 20V 580MA SOT-323
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3SOT-323-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current630 mA580 mA-
Rds On Drain Source Resistance550 mOhms550 mOhms-
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage4.5 V12 V-
Qg Gate Charge- 1 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation300 mW520 mW-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height0.9 mm0.9 mm-
Length2 mm2 mm-
SeriesBSS209BSS209-
Transistor Type1 P-Channel1 P-Channel-
Width1.25 mm1.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min870 mS--
Fall Time4.6 ns5.8 ns-
Product TypeMOSFETMOSFET-
Rise Time7 ns5.8 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time6 ns7.6 ns-
Typical Turn On Delay Time2.6 ns4.4 ns-
Part # AliasesBSS209PW BSS29PWH6327XT H6327 SP000750498BSS209PWL6327XT-
Unit Weight0.000176 oz0.000176 oz-
Product-MOSFET Small Signal-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSS209PWH6327XTSA1 MOSFET P-Ch -20V -630mA SOT-323-3
BSS209PW MOSFET P-CH 20V 580MA SOT-323
BSS209PW L6327 MOSFET P-CH 20V 580MA SOT-323
BSS209PWH6327XTSA1 MOSFET P-CH 20V 0.63A SOT-323
Infineon Technologies
Infineon Technologies
BSS209PW L6327 MOSFET P-Ch -20V 580mA SOT-323-3
BSS209PW H6327 New and Original
BSS209PW L6327 New and Original
BSS209PW6327 New and Original
BSS209PWH6327 INFINEON TRANS BSS209PWH6327XTSA1, RL
BSS209PWH6327XTSA1INFINE New and Original
BSS209PWL6327 New and Original
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