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| PartNumber | BSS306N H6327 | BSS306NH6327XTSA1 | BSS306NH6327XT |
| Description | MOSFET N-Ch 30V 2.3A SOT-23-3 | MOSFET N-Ch 30V 2.3A SOT-23-3 | MOSFET N-Ch 30V 2.3A SOT-23-3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 2.3 A | 2.3 A | 2.3 A |
| Rds On Drain Source Resistance | 44 mOhms | 57 mOhms | 57 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 1.5 nC | 1.5 nC | 1.5 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | 500 mW (1/2 W) |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 2.9 mm | 2.9 mm | 2.9 mm |
| Series | BSS306 | BSS306 | BSS306 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 1.3 mm | 1.3 mm | 1.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 5 S | 5 S | 5 S |
| Fall Time | 1.4 ns | 1.4 ns | 1.4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.3 ns | 2.3 ns | 2.3 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 8.3 ns | 8.3 ns | 8.3 ns |
| Typical Turn On Delay Time | 4.4 ns | 4.4 ns | 4.4 ns |
| Part # Aliases | BSS306NH6327XTSA1 BSS36NH6327XT SP000928940 | BSS306N BSS36NH6327XT H6327 SP000928940 | BSS306NH6327XTSA1 SP000928940 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS306N H6327 | MOSFET N-Ch 30V 2.3A SOT-23-3 | |
| BSS306NH6327XTSA1 | MOSFET N-Ch 30V 2.3A SOT-23-3 | ||
| BSS306NH6327XT | MOSFET N-Ch 30V 2.3A SOT-23-3 | ||
| BSS306NH6327XTSA1 | MOSFET N-CH 30V 2.3A SOT23 | ||
| BSS306NL6327HTSA1 | MOSFET N-CH 30V 2.3A SOT-23 | ||
| BSS306N | Transistor: N-MOSFET, unipolar, 30V, 2.3A, 0.5W, SOT23 | ||
| BSS306N L6327 | New and Original | ||
| BSS306N H6327 | Trans MOSFET N-CH 30V 2.3A 3-Pin SOT-23 T/R | ||
| BSS306NH6327 | Small Signal Field-Effect Transistor, 2.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSS306NL6327 | Trans MOSFET N-CH 30V 2.3A 3-Pin SOT-23 T/R (Alt: SP000442400) | ||
| BSS306N L6327 | IGBT Transistors MOSFET N-Ch 30V 2.3A SOT-23-3 | ||
| BSS306NH6327XT | IGBT Transistors MOSFET N-Ch 30V 2.3A SOT-23-3 |