 |  | |
| PartNumber | BSS314PEH6327XTSA1 | BSS314PEH6327 |
| Description | MOSFET P-Ch -30V -1.5A SOT-23-3 | -30V,-1.5A,P-Ch Small-Signal MOSFET |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-23-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - |
| Id Continuous Drain Current | 1.5 A | - |
| Rds On Drain Source Resistance | 107 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | - 2.9 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | - |
| Height | 1.1 mm | - |
| Length | 2.9 mm | - |
| Series | BSS314 | - |
| Transistor Type | 1 P-Channel | - |
| Width | 1.3 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 3 S | - |
| Fall Time | 2.8 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 3.9 ns | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 12.4 ns | - |
| Typical Turn On Delay Time | 5.1 ns | - |
| Part # Aliases | BSS314PE BSS314PEH6327XT H6327 SP000928944 | - |
| Unit Weight | 0.000282 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS314PEH6327XTSA1 | MOSFET P-Ch -30V -1.5A SOT-23-3 | |
| BSS314PEH6327XTSA1 | MOSFET P-CH 30V 1.5A SOT23 | ||
| BSS314PEH6327 | -30V,-1.5A,P-Ch Small-Signal MOSFET |