PartNumber | BSS606N H6327 | BSS60 | BSS606N |
Description | MOSFET N-Ch 60V 2.3A SOT-89-3 | ||
Manufacturer | Infineon | Infineon Technologies | - |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-89-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Configuration | Single | Single | - |
Packaging | Reel | Reel | - |
Height | 1.5 mm | - | - |
Length | 4.5 mm | - | - |
Product | MOSFET Small Signal | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 2.5 mm | - | - |
Brand | Infineon Technologies | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | BSS606NH6327XT BSS606NH6327XTSA1 SP000691152 | - | - |
Series | - | BSS606 | - |
Part Aliases | - | BSS606N H6327 SP000691152 | - |
Unit Weight | - | 0.004603 oz | - |
Package Case | - | SOT-89-4 | - |
Pd Power Dissipation | - | 1 W | - |
Id Continuous Drain Current | - | 2.3 A | - |
Vds Drain Source Breakdown Voltage | - | 60 V | - |
Rds On Drain Source Resistance | - | 60 mOhms | - |
Qg Gate Charge | - | 1.6 nC | - |