PartNumber | BSS806NE H6327 | BSS806NE | BSS806NEH6327 |
Description | MOSFET N-Ch 20V 2.3A SOT-23-3 | ||
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-23-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 2.3 A | - | - |
Rds On Drain Source Resistance | 41 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 300 mV | - | - |
Vgs Gate Source Voltage | 8 V | - | - |
Qg Gate Charge | 1.7 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 500 mW (1/2 W) | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 1.1 mm | - | - |
Length | 2.9 mm | - | - |
Series | BSS806 | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 1.3 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 9 S | - | - |
Fall Time | 3.7 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 9.9 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 12 ns | - | - |
Typical Turn On Delay Time | 7.5 ns | - | - |
Part # Aliases | BSS806NEH6327XTSA1 SP000999336 | - | - |
Unit Weight | 0.000282 oz | - | - |