PartNumber | BSS816NWH6327XTSA1 | BSS816NWH6327 |
Description | MOSFET N-Ch 20V 1.4A SOT-323-3 | MOSFET N-CHAN OPTIMOS-2 20V 1.4A SOT323, RL |
Manufacturer | Infineon | - |
Product Category | MOSFET | - |
RoHS | Y | - |
Technology | Si | - |
Mounting Style | SMD/SMT | - |
Package / Case | SOT-323-3 | - |
Number of Channels | 1 Channel | - |
Transistor Polarity | N-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | - |
Id Continuous Drain Current | 1.4 A | - |
Rds On Drain Source Resistance | 160 mOhms | - |
Vgs th Gate Source Threshold Voltage | 300 mV | - |
Vgs Gate Source Voltage | 2.5 V | - |
Qg Gate Charge | 0.6 nC | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 150 C | - |
Pd Power Dissipation | 500 mW (1/2 W) | - |
Configuration | Single | - |
Channel Mode | Enhancement | - |
Packaging | Reel | - |
Height | 0.9 mm | - |
Length | 2 mm | - |
Series | BSS816 | - |
Transistor Type | 1 N-Channel | - |
Width | 1.25 mm | - |
Brand | Infineon Technologies | - |
Fall Time | 2.2 ns | - |
Product Type | MOSFET | - |
Rise Time | 9 ns | - |
Factory Pack Quantity | 3000 | - |
Subcategory | MOSFETs | - |
Typical Turn Off Delay Time | 11 ns | - |
Typical Turn On Delay Time | 5.3 ns | - |
Part # Aliases | BSS816NW BSS816NWH6327XT H6327 SP000917562 | - |
Unit Weight | 0.000176 oz | - |