 |  | | |
| PartNumber | BSS84DW-7-F | BSS84DW-7-F-HN | BSS84DW-7-F-CUT TAPE |
| Description | MOSFET -50V 200mW | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 50 V | - | - |
| Id Continuous Drain Current | 130 mA | - | - |
| Rds On Drain Source Resistance | 10 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
| Vgs Gate Source Voltage | 5 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1 mm | - | - |
| Length | 2.2 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | BSS84 | - | - |
| Transistor Type | 2 P-Channel | - | - |
| Type | Enhancement Mode Field Effect Transistor | - | - |
| Width | 1.35 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 0.05 S | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 18 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Unit Weight | 0.000212 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
BSS84DW-7-F | MOSFET -50V 200mW | |
| BSS84DW-7-F-HN | New and Original | ||
| BSS84DW-7-F-CUT TAPE | New and Original | ||
| BSS84DW-7-F | Darlington Transistors MOSFET -50V 200mW |