PartNumber | BSZ031NE2LS5ATMA1 | BSZ034N04LS | BSZ033NE2LS5ATMA1 |
Description | MOSFET LV POWER MOS | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-CH 25V 18A 8SON |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TSDSON-8 | TSDSON-8 | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 25 V | 40 V | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 1.1 mm | 1.1 mm | - |
Length | 3.3 mm | 3.3 mm | - |
Series | OptiMOS 5 | OptiMOS 5 | - |
Width | 3.3 mm | 3.3 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | BSZ031NE2LS5 SP001385378 | BSZ034N04LSATMA1 SP001067020 | - |
Number of Channels | - | 1 Channel | - |
Id Continuous Drain Current | - | 40 A | - |
Rds On Drain Source Resistance | - | 2.7 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 1.2 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 35 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 52 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Forward Transconductance Min | - | 46 S | - |
Fall Time | - | 3 ns | - |
Rise Time | - | 4 ns | - |
Typical Turn Off Delay Time | - | 19 ns | - |
Typical Turn On Delay Time | - | 4 ns | - |