 | | | |
| PartNumber | BSZ050N03LS G | BSZ050N03MS G | BSZ050N03LSGATMA1 |
| Description | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | TSDSON-8 | TSDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 40 A | 15 A | 40 A |
| Rds On Drain Source Resistance | 4.2 mOhms | 4.5 mOhms | 4.2 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | - | 1 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 35 nC | - | 35 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 50 W | 2.1 W | 50 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Series | OptiMOS 3 | OptiMOS 3M | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 38 S | - | 38 S |
| Fall Time | 3.6 ns | 3.2 ns | 3.6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4 ns | 4.2 ns | 4 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 21 ns | 26 ns | 21 ns |
| Typical Turn On Delay Time | 5.2 ns | 6.7 ns | 5.2 ns |
| Part # Aliases | BSZ050N03LSGATMA1 BSZ5N3LSGXT SP000304139 | BSZ050N03MSGATMA1 BSZ5N3MSGXT SP000311518 | BSZ050N03LS BSZ5N3LSGXT G SP000304139 |
| Unit Weight | - | - | 0.070548 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ050N03LS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | |
| BSZ050N03MS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | ||
| BSZ050N03LSGATMA1 | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ050N03LSGATMA1 | MOSFET N-CH 30V 40A TSDSON-8 | ||
| BSZ050N03MSGATMA1 | MOSFET N-CH 30V 40A TSDSON-8 | ||
Infineon Technologies |
BSZ050N03MSGATMA1 | MOSFET LV POWER MOS | |
| BSZ050N030LSG | New and Original | ||
| BSZ050N03LS | New and Original | ||
| BSZ050N03LS G | Trans MOSFET N-CH 30V 16A 8-Pin TSDSON EP | ||
| BSZ050N03LSG | New and Original | ||
| BSZ050N03LSGXT | New and Original | ||
| BSZ050N03M | New and Original | ||
| BSZ050N03MS | New and Original | ||
| BSZ050N03MS-G | New and Original | ||
| BSZ050N03MSG | Power Field-Effect Transistor, 40A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSZ050N03LSGATMA1-CUT TAPE | New and Original | ||
| BSZ050N03MS G | IGBT Transistors MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M |