 | | | |
| PartNumber | BSZ086P03NS3 G | BSZ086P03NS3EGATMA1 | BSZ086P03NS3E G |
| Description | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | TSDSON-8 | TSDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 40 A | 40 A | 40 A |
| Rds On Drain Source Resistance | 6.5 mOhms | 6.5 mOhms | 6.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.1 V | 3.1 V | 3.1 V |
| Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
| Qg Gate Charge | 57.5 nC | 57.5 nC | 57.5 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 69 W | 69 W | 69 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | - | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Series | OptiMOS P3 | BSZ086P03 | OptiMOS P3 |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 30 S | 30 S | 30 S |
| Fall Time | 8 ns | 8 ns | 8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 46 ns | 46 ns | 46 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 35 ns | 35 ns | 35 ns |
| Typical Turn On Delay Time | 16 ns | 16 ns | 16 ns |
| Part # Aliases | BSZ086P03NS3GATMA1 BSZ86P3NS3GXT SP000473024 | BSZ086P03NS3E BSZ86P3NS3EGXT G SP000473016 | BSZ086P03NS3EGATMA1 BSZ86P3NS3EGXT SP000473016 |
| Unit Weight | 0.003527 oz | - | 0.003527 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ086P03NS3 G | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | |
| BSZ086P03NS3GATMA1 | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | ||
| BSZ086P03NS3EGATMA1 | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | ||
| BSZ086P03NS3E G | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | ||
| BSZ086P03NS3GXT | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | ||
| BSZ086P03NS3GATMA1 | MOSFET P-CH 30V 40A TSDSON-8 | ||
| BSZ086P03NS3EGATMA1 | MOSFET P-CH 30V 40A TSDSON-8 | ||
| BSZ086P03NE | New and Original | ||
| BSZ086P03NS3 | New and Original | ||
| BSZ086P03NS3 G | Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON T/R (Alt: BSZ086P03NS3 G) | ||
| BSZ086P03NS3E G | Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON T/R (Alt: BSZ086P03NS3E G) | ||
| BSZ086P03NS3EG | -30V,-40A,P Channel Power MOSFET | ||
| BSZ086P03NS3G | New and Original | ||
| BSZ086P03NS3G , TFZV39B | New and Original | ||
| BSZ086P03NS3GATMA1-CUT TAPE | New and Original |