PartNumber | BSZ086P03NS3GATMA1 | BSZ086P03NS3G | BSZ086P03NS3G , TFZV39B |
Description | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | ||
Manufacturer | Infineon | INF | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TSDSON-8 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 40 A | - | - |
Rds On Drain Source Resistance | 6.5 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3.1 V | - | - |
Vgs Gate Source Voltage | 25 V | - | - |
Qg Gate Charge | 57.5 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 69 W | - | - |
Configuration | Single | Single Quad Drain Triple Source | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Height | 1.1 mm | - | - |
Length | 3.3 mm | - | - |
Series | BSZ086P03 | OptiMOS | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Width | 3.3 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 30 S | - | - |
Fall Time | 8 ns | 8 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 46 ns | 46 ns | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 35 ns | 35 ns | - |
Typical Turn On Delay Time | 16 ns | 16 ns | - |
Part # Aliases | BSZ086P03NS3 BSZ86P3NS3GXT G SP000473024 | - | - |
Part Aliases | - | BSZ086P03NS3GATMA1 BSZ086P03NS3GXT SP000473024 | - |
Tradename | - | OptiMOS | - |
Package Case | - | 8-PowerTDFN | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | PG-TSDSON-8 (3.3x3.3) | - |
FET Type | - | MOSFET P-Channel, Metal Oxide | - |
Power Max | - | 69W | - |
Drain to Source Voltage Vdss | - | 30V | - |
Input Capacitance Ciss Vds | - | 4785pF @ 15V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 13.5A (Ta), 40A (Tc) | - |
Rds On Max Id Vgs | - | 8.6 mOhm @ 20A, 10V | - |
Vgs th Max Id | - | 1.9V @ 105μA | - |
Gate Charge Qg Vgs | - | 57.5nC @ 10V | - |
Pd Power Dissipation | - | 69 W | - |
Vgs Gate Source Voltage | - | 25 V | - |
Id Continuous Drain Current | - | 13.5 A | - |
Vds Drain Source Breakdown Voltage | - | - 30 V | - |
Rds On Drain Source Resistance | - | 8.6 mOhms | - |