BSZ0902

BSZ0902NSI vs BSZ0902NS vs BSZ0902NSATMA1

 
PartNumberBSZ0902NSIBSZ0902NSBSZ0902NSATMA1
DescriptionMOSFET N-Ch 30V 40A TDSON-8 OptiMOSMOSFET N-Ch 30V 40A TDSON-8 OptiMOSMOSFET LV POWER MOS
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTSDSON-8TSDSON-8TSDSON-8
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current40 A40 A-
Rds On Drain Source Resistance2.3 mOhms2.6 mOhms-
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge24 nC26 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation48 W48 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height1.1 mm1.1 mm1.1 mm
Length3.3 mm3.3 mm3.3 mm
Transistor Type1 N-Channel1 N-Channel-
Width3.3 mm3.3 mm3.3 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min50 S--
Fall Time3.8 ns3.6 nS-
Product TypeMOSFETMOSFETMOSFET
Rise Time5.4 ns5.2 nS-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time20 ns21 nS-
Typical Turn On Delay Time3.9 ns--
Part # AliasesBSZ0902NSIATMA1 BSZ92NSIXT SP000854388BSZ0902NSATMA1 BSZ92NSXT SP000854386BSZ0902NS BSZ92NSXT SP000854386
Unit Weight-0.003527 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSZ0902NSI MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
BSZ0902NS MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
BSZ0902NSIATMA1 MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
BSZ0902NSATMA1 MOSFET N-CH 30V 40A TSDSON-8
BSZ0902NSIATMA1 MOSFET N-CH 30V 21A TSDSON-8
Infineon Technologies
Infineon Technologies
BSZ0902NSATMA1 MOSFET LV POWER MOS
BSZ0902NS Trans MOSFET N-CH 30V 25A 8-Pin TSDSON EP T/R (Alt: BSZ0902NS)
BSZ0902NSI RF Bipolar Transistors MOSFET N-Ch 30V 40A TDSON-8 OptiMOS
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