BSZ44

BSZ440N10NS3 G vs BSZ440N10NS3 vs BSZ440N10NS3G

 
PartNumberBSZ440N10NS3 GBSZ440N10NS3BSZ440N10NS3G
DescriptionMOSFET N-Ch 100V 18A TSDSON-8 OptiMOS 3POWER FIELD-EFFECT TRANSISTOR, 5.3A I(D), 100V, 0.044OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current18 A--
Rds On Drain Source Resistance38 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge9.1 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation29 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.1 mm--
Length3.3 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width3.3 mm--
BrandInfineon Technologies--
Forward Transconductance Min8 S--
Fall Time2 ns--
Product TypeMOSFET--
Rise Time1.8 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time9.1 ns--
Typical Turn On Delay Time4.3 ns--
Part # AliasesBSZ440N10NS3GATMA1 BSZ44N1NS3GXT SP000482442--
Unit Weight0.003527 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSZ440N10NS3 G MOSFET N-Ch 100V 18A TSDSON-8 OptiMOS 3
BSZ440N10NS3GATMA1 MOSFET N-Ch 100V 18A TSDSON-8 OptiMOS 3
BSZ440N10NS3GATMA1 MOSFET N-CH 100V 18A TSDSON-8
BSZ440N10NS3 New and Original
BSZ440N10NS3 G Trans MOSFET N-CH 100V 5.3A 8-Pin TSDSON EP
BSZ440N10NS3G POWER FIELD-EFFECT TRANSISTOR, 5.3A I(D), 100V, 0.044OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
BSZ440N10NS3GS New and Original
BSZ440N10NS3GATMA1-CUT TAPE New and Original
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