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BSZ520N15NS3G

BSZ520N15NS3GATMA1 vs BSZ520N15NS3G vs BSZ520N15NS3GXT

 
PartNumberBSZ520N15NS3GATMA1BSZ520N15NS3GBSZ520N15NS3GXT
DescriptionMOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3POWER FIELD-EFFECT TRANSISTOR, 21A I(D), 150V, 0.052OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FETTrans MOSFET N-CH 150V 21A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ520N15NS3GATMA1)
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePG-TSDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current21 A--
Rds On Drain Source Resistance52 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge8.7 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation57 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.1 mm--
Length3.3 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width3.3 mm--
BrandInfineon Technologies--
Forward Transconductance Min11 S--
Fall Time3 ns--
Product TypeMOSFET--
Rise Time5 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time10 ns--
Typical Turn On Delay Time7 ns--
Part # AliasesBSZ520N15NS3 BSZ52N15NS3GXT G SP000607022--
Unit Weight0.007055 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies 		BSZ520N15NS3GATMA1 MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3
BSZ520N15NS3GATMA1 MOSFET N-CH 150V 21A 8-TSDSON
BSZ520N15NS3G POWER FIELD-EFFECT TRANSISTOR, 21A I(D), 150V, 0.052OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
BSZ520N15NS3GXT Trans MOSFET N-CH 150V 21A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ520N15NS3GATMA1)
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