BSZ900N1

BSZ900N15NS3GATMA1 vs BSZ900N15NS3 G vs BSZ900N15NS3G

 
PartNumberBSZ900N15NS3GATMA1BSZ900N15NS3 GBSZ900N15NS3G
DescriptionMOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSDSON-8TSDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage150 V150 V-
Id Continuous Drain Current13 A13 A-
Rds On Drain Source Resistance74 mOhms74 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge7 nC7 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation38 W38 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length3.3 mm3.3 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width3.3 mm3.3 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min6 S6 S-
Fall Time3 ns3 ns-
Product TypeMOSFETMOSFET-
Rise Time4 ns4 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time8 ns8 ns-
Typical Turn On Delay Time4 ns4 ns-
Part # AliasesBSZ900N15NS3 BSZ9N15NS3GXT G SP000677866BSZ900N15NS3GATMA1 BSZ9N15NS3GXT SP000677866-
Unit Weight0.001349 oz0.003527 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSZ900N15NS3GATMA1 MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3
BSZ900N15NS3 G MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3
BSZ900N15NS3GATMA1 MOSFET N-CH 150V 13A TDSON-8
BSZ900N15NS3 G Trans MOSFET N-CH 150V 13A 8-Pin TSDSON EP
BSZ900N15NS3G New and Original
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