BTS115A

BTS115A vs BTS115A E3045 vs BTS115A E3045A

 
PartNumberBTS115ABTS115A E3045BTS115A E3045A
DescriptionMOSFET N-Ch 50V 6.7A TO220-3MOSFET N-Ch 50V 6.7A TO220-3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSN--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage50 V--
Id Continuous Drain Current6.7 A--
Rds On Drain Source Resistance120 mOhms--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation50 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height15.65 mm--
Length10 mm--
SeriesBTS115--
Transistor Type1 N-Channel--
Width4.4 mm--
BrandInfineon Technologies--
Fall Time50 ns--
Product TypeMOSFET--
Rise Time70 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesBTS115ANKSA1 SP000011193--
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
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BTS115A E3045A MOSFET N-Ch 50V 6.7A TO220-3
BTS115A SMD New and Original
BTS115A STS New and Original
BTS115AE30 New and Original
BTS115AE3045 Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BTS115AE3045A Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
BTS115ASMD New and Original
Infineon Technologies
Infineon Technologies
BTS115ANKSA1 MOSFET N-CH 50V 15.5A TO-220AB
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