PartNumber | BU508AF | BU508AFI |
Description | Bipolar Transistors - BJT NPN Power Transistor | Bipolar Transistors - BJT NPN General Purpose |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y |
Mounting Style | Through Hole | SMD/SMT |
Package / Case | ISOWATT-218FX-3 | SOT-93-3 |
Transistor Polarity | NPN | NPN |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 700 V | 700 V |
Collector Base Voltage VCBO | 9 V | - |
Emitter Base Voltage VEBO | 9 V | 10 V |
Maximum DC Collector Current | 8 A | 8 A |
Minimum Operating Temperature | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Series | BU508AF | BU508AF |
Height | 14.7 mm | 14.9 mm |
Length | 26.7 mm | 16.2 mm |
Width | 15.7 mm | 5.65 mm |
Brand | STMicroelectronics | STMicroelectronics |
Continuous Collector Current | 8 A | 8 A |
Pd Power Dissipation | 50000 mW | 50 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 300 | 30 |
Subcategory | Transistors | Transistors |
Gain Bandwidth Product fT | - | 7 MHz |
Packaging | - | Tube |