BUK661R

BUK661R9-40C,118 vs BUK661R8-30C,118 vs BUK661R6-30C,118

 
PartNumberBUK661R9-40C,118BUK661R8-30C,118BUK661R6-30C,118
DescriptionMOSFET N-CHAN 40V 120AMOSFET N-CH 30V 120A D2PAKMOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current120 A--
Rds On Drain Source Resistance1.9 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation306 W--
ConfigurationSingle--
QualificationAEC-Q101--
PackagingReel--
Transistor Type1 N-Channel--
BrandNexperia--
Product TypeMOSFET--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Nexperia
Nexperia
BUK661R9-40C,118 MOSFET N-CHAN 40V 120A
BUK661R8-30C,118 MOSFET N-CH 30V 120A D2PAK
BUK661R9-40C,118 MOSFET N-CHAN 40V 120A
BUK661R6-30C,118 MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET
BUK661R6-30C118 Now Nexperia BUK661R6-30C - Power Field-Effect Transistor, 120A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BUK661R6-30C New and Original
BUK661R8-30C New and Original
BUK661R8-30C118 Now Nexperia BUK661R8-30C - Power Field-Effect Transistor, 120A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BUK661R9-40C New and Original
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