BUK662

BUK662R4-40C,118 vs BUK662R7-55C,118 vs BUK662R5-30C,118

 
PartNumberBUK662R4-40C,118BUK662R7-55C,118BUK662R5-30C,118
DescriptionMOSFET N-CHANNEL TRENCHMOS FETMOSFET N-CHAN 55V 120ARF Bipolar Transistors MOSFET N-CHAN 30V 100A
ManufacturerNexperiaNexperia-
Product CategoryMOSFETMOSFET-
RoHSEE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V55 V-
Id Continuous Drain Current120 A120 A-
Rds On Drain Source Resistance1.9 mOhms2.7 mOhms-
ConfigurationSingleSingle-
QualificationAEC-Q101AEC-Q101-
PackagingReelReel-
Transistor Type1 N-Channel1 N-Channel-
BrandNexperiaNexperia-
Product TypeMOSFETMOSFET-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Pd Power Dissipation-306 W-
Unit Weight-0.139332 oz-
Manufacturer Part # Description RFQ
Nexperia
Nexperia
BUK662R4-40C,118 MOSFET N-CHANNEL TRENCHMOS FET
BUK662R7-55C,118 MOSFET N-CHAN 55V 120A
BUK662R7-55C,118 MOSFET N-CHAN 55V 120A
BUK662R4-40C,118 RF Bipolar Transistors MOSFET N-CHANNEL TRENCHMOS FET
BUK662R5-30C,118 RF Bipolar Transistors MOSFET N-CHAN 30V 100A
BUK662R5-30C New and Original
BUK662R5-30C118 Now Nexperia BUK662R5-30C - Power Field-Effect Transistor, 100A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BUK662R7-55C - Bulk (Alt: BUK662R7-55C)
BUK662R7-55C118 Now Nexperia BUK662R7-55C - Power Field-Effect Transistor, 120A I(D), 55V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BUK662R4-40C Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK
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