 |  | | |
| PartNumber | BUK662R7-55C,118 | BUK662R7-55C | BUK662R7-55C118 |
| Description | MOSFET N-CHAN 55V 120A | - Bulk (Alt: BUK662R7-55C) | Now Nexperia BUK662R7-55C - Power Field-Effect Transistor, 120A I(D), 55V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 2.7 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 306 W | - | - |
| Configuration | Single | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Nexperia | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
BUK662R7-55C,118 | MOSFET N-CHAN 55V 120A | |
| BUK662R7-55C,118 | MOSFET N-CHAN 55V 120A | ||
| BUK662R7-55C | - Bulk (Alt: BUK662R7-55C) | ||
| BUK662R7-55C118 | Now Nexperia BUK662R7-55C - Power Field-Effect Transistor, 120A I(D), 55V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |