BUK664

BUK664R4-55C,118 vs BUK664R6-40C,118 vs BUK664R8-75C,118

 
PartNumberBUK664R4-55C,118BUK664R6-40C,118BUK664R8-75C,118
DescriptionMOSFET N-CHAN 55V 100AMOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FETMOSFET N-CHANNEL TRENCHMOS FET
ManufacturerNexperiaNexperia-
Product CategoryMOSFETMOSFET-
RoHSEE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage55 V40 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance4.4 mOhms3.6 mOhms-
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation204 W--
ConfigurationSingleSingle-
QualificationAEC-Q101AEC-Q101-
PackagingReelReel-
Transistor Type1 N-Channel1 N-Channel-
BrandNexperiaNexperia-
Product TypeMOSFETMOSFET-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Nexperia
Nexperia
BUK664R4-55C,118 MOSFET N-CHAN 55V 100A
BUK664R6-40C,118 MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET
BUK664R4-55C,118 MOSFET N-CH 55V 100A D2PAK
BUK664R8-75C,118 MOSFET N-CHANNEL TRENCHMOS FET
BUK664R6-40C,118 RF Bipolar Transistors MOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET
BUK664R4-55C New and Original
BUK664R6-10C,118 New and Original
BUK664R6-40C118 Now Nexperia BUK664R6-40C - Power Field-Effect Transistor, 80A I(D), 40V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BUK664R8-75C118 Now Nexperia BUK664R8-75C - Power Field-Effect Transistor, 100A I(D), 75V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BUK664R6-40C Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) D2PAK
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