BUK7606-7

BUK7606-75B,118 vs BUK7606-75B /T3 vs BUK7606-75B

 
PartNumberBUK7606-75B,118BUK7606-75B /T3BUK7606-75B
DescriptionMOSFET HIGH PERF TRENCHMOSMOSFET HIGH PERF TRENCHMOSPOWER FIELD-EFFECT TRANSISTOR, 75A I(D), 75V, 0.0056OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage75 V--
Id Continuous Drain Current159 A--
Rds On Drain Source Resistance5.6 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel--
Height4.5 mm--
Length10.3 mm--
Transistor Type1 N-Channel--
Width9.4 mm--
BrandNexperia--
Fall Time48 ns--
Product TypeMOSFET--
Rise Time56 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time128 ns--
Typical Turn On Delay Time36 ns--
Part # Aliases/T3 BUK7606-75B--
Unit Weight0.051211 oz--
Manufacturer Part # Description RFQ
Nexperia
Nexperia
BUK7606-75B,118 MOSFET HIGH PERF TRENCHMOS
BUK7606-75B,118 MOSFET HIGH PERF TRENCHMOS
BUK7606-75B /T3 MOSFET HIGH PERF TRENCHMOS
BUK7606-75B POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 75V, 0.0056OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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