 |  |  | |
| PartNumber | BUK7607-55B,118 | BUK7607-55B /T3 | BUK7607-30B,118 |
| Description | MOSFET HIGH PERF TRENCHMOS | MOSFET HIGH PERF TRENCHMOS | RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 119 A | - | - |
| Rds On Drain Source Resistance | 7.1 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 203 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Height | 4.5 mm | - | - |
| Length | 10.3 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.4 mm | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 41 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 52 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 77 ns | - | - |
| Typical Turn On Delay Time | 24 ns | - | - |
| Part # Aliases | /T3 BUK7607-55B | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
BUK7607-55B,118 | MOSFET HIGH PERF TRENCHMOS | |
| BUK7607-55B,118 | RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS | ||
| BUK7607-30B,118 | RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS | ||
| BUK7607-55B /T3 | MOSFET HIGH PERF TRENCHMOS | ||
| BUK7607-55B118 | Now Nexperia BUK7607-55B - Power Field-Effect Transistor, 119A I(D), 55V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK760755B118 | New and Original |