BUK761R

BUK761R6-40E,118 vs BUK761R7-40E,118

 
PartNumberBUK761R6-40E,118BUK761R7-40E,118
DescriptionMOSFET N-channel TrenchMOS intermed level FETMOSFET N-channel TrenchMOS standard level FET
ManufacturerNexperiaNexperia
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V
Id Continuous Drain Current120 A120 A
Rds On Drain Source Resistance1.57 mOhms1.32 mOhms
Vgs th Gate Source Threshold Voltage3 V3 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge145 nC118 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation349 W324 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
QualificationAEC-Q101AEC-Q101
PackagingReelReel
Transistor Type1 N-Channel1 N-Channel
BrandNexperiaNexperia
Fall Time83 ns52 ns
Product TypeMOSFETMOSFET
Rise Time60 ns49 ns
Factory Pack Quantity800800
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time121 ns87 ns
Typical Turn On Delay Time42 ns35 ns
Unit Weight0.139332 oz-
Manufacturer Part # Description RFQ
Nexperia
Nexperia
BUK761R6-40E,118 MOSFET N-channel TrenchMOS intermed level FET
BUK761R7-40E,118 MOSFET N-channel TrenchMOS standard level FET
BUK761R6-40E,118 IGBT Transistors MOSFET N-channel TrenchMOS intermed level FET
BUK761R7-40E,118 RF Bipolar Transistors MOSFET N-channel TrenchMOS standard level FET
NXP Semiconductors
NXP Semiconductors
BUK761R3-30E,118 MOSFET N-CH 30V 120A D2PAK
BUK761R4-30E,118 MOSFET N-CH 30V 120A D2PAK
BUK761R5-40EJ MOSFET N-CH 40V 120A D2PAK
BUK761R7-40E/GFJ MOSFET N-CH D2PAK
BUK761R8-30C,118 MOSFET N-CH 30V 100A D2PAK
BUK761R7-40E118 Now Nexperia BUK761R7-40E - Power Field-Effect Transistor, D2PAK
BUK761R4-30E118 Now Nexperia BUK761R4-30E - Power Field-Effect Transistor, D2PAK
BUK761R6-40E118 Now Nexperia BUK761R6-40E - Power Field-Effect Transistor, D2PAK
BUK761R8-30C118 Now Nexperia BUK761R8-30C - Power Field-Effect Transistor, 312A I(D), 30V, 1800ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BUK761R3-30E New and Original
BUK761R4-30E New and Original
BUK761R8-30C New and Original
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