BUK7E1R

BUK7E1R9-40E,127 vs BUK7E1R8-40E,127

 
PartNumberBUK7E1R9-40E,127BUK7E1R8-40E,127
DescriptionMOSFET N-channel TrenchMOS standard level FETMOSFET BUK7E1R8-40E/I2PAK/STANDARD MA
ManufacturerNexperiaNexperia
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseI2PAK-3I2PAK-3
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage40 V-
Id Continuous Drain Current120 A-
Rds On Drain Source Resistance1.5 mOhms-
Vgs th Gate Source Threshold Voltage3 V-
Vgs Gate Source Voltage20 V-
Qg Gate Charge118 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 175 C-
Pd Power Dissipation324 W-
ConfigurationSingle-
QualificationAEC-Q101AEC-Q101
PackagingTubeTube
Transistor Type1 N-Channel-
BrandNexperiaNexperia
Fall Time52 ns-
Product TypeMOSFETMOSFET
Rise Time49 ns-
Factory Pack Quantity5050
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time87 ns-
Typical Turn On Delay Time35 ns-
Unit Weight0.084199 oz0.070548 oz
Manufacturer Part # Description RFQ
Nexperia
Nexperia
BUK7E1R9-40E,127 MOSFET N-channel TrenchMOS standard level FET
BUK7E1R8-40E,127 MOSFET BUK7E1R8-40E/I2PAK/STANDARD MA
BUK7E1R8-40E,127 MOSFET N-CH 40V 120A I2PAK
BUK7E1R9-40E,127 Darlington Transistors MOSFET N-channel TrenchMOS standard level FET
NXP Semiconductors
NXP Semiconductors
BUK7E1R6-30E,127 MOSFET N-CH 30V 120A I2PAK
BUK7E1R6-30E127 Now Nexperia BUK7E1R6-30E - Power Field-Effect Transistor, I2PAK
BUK7E1R8-40E127 New and Original
Top