BUK9212

BUK9212-55B,118 vs BUK9212-55B vs BUK9212-55B118

 
PartNumberBUK9212-55B,118BUK9212-55BBUK9212-55B118
DescriptionMOSFET HIGH PERF TRENCHMOSNow Nexperia BUK9212-55B - Power Field-Effect Transistor, 75A I(D), 55V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current83 A--
Rds On Drain Source Resistance10 mOhms--
Vgs Gate Source Voltage15 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 185 C--
Pd Power Dissipation167 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel--
Height2.38 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandNexperia--
Fall Time75 ns--
Product TypeMOSFET--
Rise Time101 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time96 ns--
Typical Turn On Delay Time19 ns--
Part # Aliases/T3 BUK9212-55B--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Nexperia
Nexperia
BUK9212-55B,118 MOSFET HIGH PERF TRENCHMOS
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BUK9212-55B118 Now Nexperia BUK9212-55B - Power Field-Effect Transistor, 75A I(D), 55V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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