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| PartNumber | BUK9275-100A,118 | BUK9275-100A | BUK9275-100A118 |
| Description | MOSFET TAPE13 PWR-MOS | Power Field-Effect Transistor, 21.7A I(D), 100V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | Now Nexperia BUK9275-100A - Power Field-Effect Transistor, 21.7A I(D), 100V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 21.7 A | - | - |
| Rds On Drain Source Resistance | 72 mOhms | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 88 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Height | 2.38 mm | - | - |
| Length | 6.73 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 57 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 120 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 58 ns | - | - |
| Typical Turn On Delay Time | 13 ns | - | - |
| Part # Aliases | /T3 BUK9275-100A | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Nexperia |
BUK9275-100A,118 | MOSFET TAPE13 PWR-MOS | |
| BUK9275-100A,118 | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS | ||
| BUK9275-100A | Power Field-Effect Transistor, 21.7A I(D), 100V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| BUK9275-100A118 | Now Nexperia BUK9275-100A - Power Field-Effect Transistor, 21.7A I(D), 100V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |