BUK9Y25-6

BUK9Y25-60E,115 vs BUK9Y25-60 vs BUK9Y25-60E

 
PartNumberBUK9Y25-60E,115BUK9Y25-60BUK9Y25-60E
DescriptionMOSFET N-channel 60 V 25 mo FET
ManufacturerNexperiaNXP Semiconductors-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseLFPAK56-5--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current34 A--
Rds On Drain Source Resistance21.5 mOhms--
Vgs th Gate Source Threshold Voltage1.4 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge12 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation65 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReelDigi-ReelR Alternate Packaging-
Transistor Type1 N-Channel--
BrandNexperia--
Fall Time10.4 ns--
Product TypeMOSFET--
Rise Time12.1 ns--
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14.7 ns--
Typical Turn On Delay Time8.5 ns--
Unit Weight0.002621 oz--
Series-Automotive, AEC-Q101, TrenchMOS-
Package Case-SC-100, SOT-669, 4-LFPAK-
Operating Temperature--55°C ~ 175°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-LFPAK, Power-SO8-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-65W-
Drain to Source Voltage Vdss-60V-
Input Capacitance Ciss Vds-1500pF @ 25V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-34A (Tc)-
Rds On Max Id Vgs-21.5 mOhm @ 10A, 10V-
Vgs th Max Id-2.1V @ 1mA-
Gate Charge Qg Vgs-12nC @ 5V-
Manufacturer Part # Description RFQ
Nexperia
Nexperia
BUK9Y25-60E,115 MOSFET N-channel 60 V 25 mo FET
BUK9Y25-60E,115 MOSFET N-CH 60V 34A LFPAK
NXP Semiconductors
NXP Semiconductors
BUK9Y25-60E/GFX MOSFET N-CH LFPAK
BUK9Y25-60 New and Original
BUK9Y25-60E New and Original
BUK9Y25-60E,115-CUT TAPE New and Original
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