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| PartNumber | BUL1102EFP | BUL1102E |
| Description | Bipolar Transistors - BJT High voltage fast switching NPN power transistor | Bipolar Transistors - BJT High voltage fast switching NPN power transistor |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220-3 |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 450 V | 450 V |
| Emitter Base Voltage VEBO | 12 V | 12 V |
| Maximum DC Collector Current | 4 A | 4 A |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | BUL1102E | BUL1102E |
| Height | 16.4 mm | 15.75 mm |
| Length | 10.4 mm | 10.4 mm |
| Packaging | Tube | Tube |
| Width | 4.6 mm | 4.6 mm |
| Brand | STMicroelectronics | STMicroelectronics |
| Continuous Collector Current | 4 A | 4 A |
| DC Collector/Base Gain hfe Min | 35 at 250 mA, 5 V, 12 at 2 A, 5 V | 35 at 250 mA, 5 V, 12 at 2 A, 5 V |
| Pd Power Dissipation | 30 W | 70 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.090478 oz | 0.211644 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
BUL1102EFP | Bipolar Transistors - BJT High voltage fast switching NPN power transistor | |
| BUL1102E | Bipolar Transistors - BJT High voltage fast switching NPN power transistor | ||
| BUL1102EFP | Bipolar Transistors - BJT IGBT & Power Bipola | ||
| BUL1102E | Bipolar Transistors - BJT IGBT & Power Bipola | ||
| BUL1102E,BUL1102EFP | New and Original | ||
| BUL1102E/ | New and Original |