BVSS

BVSS123LT1G vs BVSS123L vs BVSS130LT1G

 
PartNumberBVSS123LT1GBVSS123LBVSS130LT1G
DescriptionMOSFET NFET 100V 170MA 6OH
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current170 mA--
Rds On Drain Source Resistance6 Ohms--
Vgs th Gate Source Threshold Voltage1.6 V--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation225 mW--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReelReel-
SeriesBSS123LBSS123L-
Transistor Type1 N-Channel1 N-Channel-
BrandON Semiconductor--
Forward Transconductance Min80 S--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time20 ns--
Unit Weight0.000282 oz0.050717 oz-
Package Case-SOT-23-3-
Id Continuous Drain Current-170 mA-
Vds Drain Source Breakdown Voltage-100 V-
Rds On Drain Source Resistance-6 Ohms-
Manufacturer Part # Description RFQ
BVSS84LT1G MOSFET PFET 50V 130MA 10.0
BVSS138LT1G MOSFET NFET 50V 200MA 3.5O
BVSS123LT1G MOSFET NFET 100V 170MA 6OH
BVSS123L New and Original
BVSS130LT1G New and Original
BVSS138L New and Original
BVSS84L New and Original
BVSS84LT1G PD New and Original
BVSS138LT1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
BVSS123LT1G MOSFET N-CH 100V 170MA SOT-23-3
BVSS138LT1G MOSFET N-CH 50V 200MA SOT-23-3
BVSS84LT1G MOSFET P-CH 50V 130MA SOT-23-3
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