C2M0040

C2M0040120D vs C2M0040120 vs C2M0040120D/SL36N120A

 
PartNumberC2M0040120DC2M0040120C2M0040120D/SL36N120A
DescriptionMOSFET SiC Power MOSFET 1200V, 60A
ManufacturerCree, Inc.CREE-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiC--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1.2 kV--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance40 mOhms--
Vgs th Gate Source Threshold Voltage2.8 V--
Vgs Gate Source Voltage25 V, - 10 V--
Qg Gate Charge283 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation330 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTubeTube-
Height21.1 mm--
Length5.21 mm--
ProductPower MOSFET--
Transistor Type1 N-Channel--
TypeSilicon Carbide Power MOSFET--
Width16.13 mm--
BrandWolfspeed / Cree--
Forward Transconductance Min13.2 S--
Fall Time34.4 ns--
Product TypeMOSFET--
Rise Time52 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26.4 ns--
Typical Turn On Delay Time14.8 ns--
Unit Weight1.340411 oz--
Series-Z-FET-
Package Case-TO-247-3-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Through Hole-
Supplier Device Package-TO-247-3-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-330W-
Drain to Source Voltage Vdss-1200V (1.2kV)-
Input Capacitance Ciss Vds-1893pF @ 1000V-
FET Feature-Silicon Carbide (SiC)-
Current Continuous Drain Id 25°C-60A (Tc)-
Rds On Max Id Vgs-52 mOhm @ 40A, 20V-
Vgs th Max Id-2.8V @ 10mA-
Gate Charge Qg Vgs-115nC @ 20V-
Manufacturer Part # Description RFQ
N/A
N/A
C2M0040120D MOSFET SiC Power MOSFET 1200V, 60A
C2M0040120D MOSFET N-CH 1200V 60A TO-247
C2M0040120 New and Original
C2M0040120D/SL36N120A New and Original
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