 |  | | |
| PartNumber | C2M0080120D | C2M0080120 | C2M0080120D/SL20N120A |
| Description | MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT | ||
| Manufacturer | Cree, Inc. | Cree Inc. | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | SiC | SiC | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1.2 kV | - | - |
| Id Continuous Drain Current | 31.6 A | - | - |
| Rds On Drain Source Resistance | 80 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.1 V | - | - |
| Vgs Gate Source Voltage | 25 V, - 5 V | - | - |
| Qg Gate Charge | 94 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 208 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Bulk | - |
| Height | 21.1 mm | - | - |
| Length | 16.13 mm | - | - |
| Product | Power MOSFET | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | Silicon Carbide Power MOSFET | - | - |
| Width | 5.21 mm | - | - |
| Brand | Wolfspeed / Cree | - | - |
| Forward Transconductance Min | 3.9 S | - | - |
| Fall Time | 21 ns | 21 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 34 ns | 34 ns | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 23.2 ns | 23.2 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns | - |
| Unit Weight | 1.340411 oz | 1.340411 oz | - |
| Series | - | C2M | - |
| Package Case | - | TO-247-3 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | TO-247-3 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 192W | - |
| Drain to Source Voltage Vdss | - | 1200V (1.2kV) | - |
| Input Capacitance Ciss Vds | - | 950pF @ 1000V | - |
| FET Feature | - | Silicon Carbide (SiC) | - |
| Current Continuous Drain Id 25°C | - | 36A (Tc) | - |
| Rds On Max Id Vgs | - | 98 mOhm @ 20A, 20V | - |
| Vgs th Max Id | - | 4V @ 5mA | - |
| Gate Charge Qg Vgs | - | 62nC @ 5V | - |
| Pd Power Dissipation | - | 208 W | - |
| Vgs Gate Source Voltage | - | - 5 V + 25 V | - |
| Id Continuous Drain Current | - | 31.6 A | - |
| Vds Drain Source Breakdown Voltage | - | 1200 V | - |
| Vgs th Gate Source Threshold Voltage | - | 3.1 V | - |
| Rds On Drain Source Resistance | - | 80 mOhms | - |
| Qg Gate Charge | - | 94 nC | - |
| Forward Transconductance Min | - | 3.9 S | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
N/A |
C2M0080120D | MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT | |
| C2M0080120D | MOSFET N-CH 1200V 31.6A TO247 | ||
| C2M0080170P | ZFET SIC DMOSFET, 1700V VDS, RDS | ||
| C2M0080120 | New and Original | ||
| C2M0080120D/SL20N120A | New and Original | ||
| C2M0080120DCREE | New and Original |