C2M0080120D

C2M0080120D vs C2M0080120D/SL20N120A vs C2M0080120DCREE

 
PartNumberC2M0080120DC2M0080120D/SL20N120AC2M0080120DCREE
DescriptionMOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
ManufacturerCree, Inc.--
Product CategoryMOSFET--
RoHSY--
TechnologySiC--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1.2 kV--
Id Continuous Drain Current31.6 A--
Rds On Drain Source Resistance80 mOhms--
Vgs th Gate Source Threshold Voltage3.1 V--
Vgs Gate Source Voltage25 V, - 5 V--
Qg Gate Charge94 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation208 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height21.1 mm--
Length16.13 mm--
ProductPower MOSFET--
Transistor Type1 N-Channel--
TypeSilicon Carbide Power MOSFET--
Width5.21 mm--
BrandWolfspeed / Cree--
Forward Transconductance Min3.9 S--
Fall Time21 ns--
Product TypeMOSFET--
Rise Time34 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23.2 ns--
Typical Turn On Delay Time12 ns--
Unit Weight1.340411 oz--
Manufacturer Part # Description RFQ
N/A
N/A
C2M0080120D MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
C2M0080120D MOSFET N-CH 1200V 31.6A TO247
C2M0080120D/SL20N120A New and Original
C2M0080120DCREE New and Original
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