C3M00651

C3M0065100J vs C3M0065100J-TR vs C3M0065100K

 
PartNumberC3M0065100JC3M0065100J-TRC3M0065100K
DescriptionMOSFET 1000V 65mOhm G3 SiC MOSFET TO-263-71000V, 65 mOhm, G3 SiC MOSFET1000V, 65 MOHM, G3 SIC MOSFET
ManufacturerCree, Inc.-CREE
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySiC--
Mounting StyleSMD/SMT--
Package / CaseTO-263-7-Radial
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage1 kV--
Id Continuous Drain Current35 A--
Rds On Drain Source Resistance65 mOhms--
Vgs th Gate Source Threshold Voltage1.8 V--
Vgs Gate Source Voltage15 V, - 4 V--
Qg Gate Charge35 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation113.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube-Bulk
Transistor Type1 N-Channel--
BrandWolfspeed / Cree--
Forward Transconductance Min14.3 S--
Fall Time7.5 ns--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns--
Typical Turn On Delay Time13 ns--
Unit Weight0.077603 oz--
Series--S
Part Status--Active
Resistance--2.04 Ohms
Tolerance--±1%
Power (Watts)--1.5W
Composition--Metal Foil
Features--Moisture Resistant, Non-Inductive
Temperature Coefficient--±2ppm/°C
Operating Temperature---55°C ~ 125°C
Supplier Device Package---
Size / Dimension--0.820" L x 0.160" W (20.83mm x 4.06mm)
Height Seated (Max)--0.413" (10.49mm)
Number of Terminations--2
Failure Rate---
Manufacturer Part # Description RFQ
N/A
N/A
C3M0065100J MOSFET 1000V 65mOhm G3 SiC MOSFET TO-263-7
C3M0065100J-TR 1000V, 65 mOhm, G3 SiC MOSFET
C3M0065100J MOSFET N-CH 1000V 35A D2PAK-7
C3M0065100K 1000V, 65 MOHM, G3 SIC MOSFET
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