C3M01200

C3M0120090J vs C3M0120090D vs C3M0120090J-TR

 
PartNumberC3M0120090JC3M0120090DC3M0120090J-TR
DescriptionMOSFET G3 SiC MOSFET 900V, 120 mOhmMOSFET G3 SiC MOSFET 900V, 120mOhmMOSFET G3 SiC MOSFET/ Reel 900V, 120 mOhm
ManufacturerCree, Inc.Cree, Inc.Cree, Inc.
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiCSiCSiC
Mounting StyleSMD/SMTThrough HoleSMD/SMT
Package / CaseTO-263-7TO-247-3TO-263-7
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage900 V900 V900 V
Id Continuous Drain Current22 A23 A22 A
Rds On Drain Source Resistance170 mOhms120 mOhms170 mOhms
Vgs th Gate Source Threshold Voltage1.8 V2.1 V1.8 V
Vgs Gate Source Voltage18 V, - 8 V-18 V, - 8 V
Qg Gate Charge17.3 nC17.3 nC17.3 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation83 W97 W83 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTubeReel
ProductPower MOSFETPower MOSFETPower MOSFET
TypeSilicon Carbide MOSFETSilicon Carbide MOSFETSilicon Carbide MOSFET
BrandWolfspeed / CreeWolfspeed / CreeWolfspeed / Cree
Forward Transconductance Min6.7 S-6.7 S
Fall Time5 ns8 ns5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time9 ns10 ns9 ns
Factory Pack Quantity5030800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time15 ns25 ns15 ns
Typical Turn On Delay Time12.5 ns27 ns12.5 ns
Unit Weight0.056438 oz1.340411 oz0.056438 oz
Height-21.1 m-
Length-16.13 mm-
Width-5.21 mm-
Moisture Sensitive--Yes
Manufacturer Part # Description RFQ
N/A
N/A
C3M0120090J MOSFET G3 SiC MOSFET 900V, 120 mOhm
C3M0120090D MOSFET G3 SiC MOSFET 900V, 120mOhm
C3M0120090J-TR MOSFET G3 SiC MOSFET/ Reel 900V, 120 mOhm
C3M0120090D 900V, 120 MOHM, G3 SIC MOSFET
C3M0120090J MOSFET N-CH 900V 22A
C3M0120090J-TR 900V, 120 MOHM, G3 SIC MOSFET
C3M0120090 New and Original
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