C3M02

C3M0280090D vs C3M0280090J-TR vs C3M0280090J

 
PartNumberC3M0280090DC3M0280090J-TRC3M0280090J
DescriptionMOSFET G3 SiC MOSFET 900V, 280mOhmMOSFET G3 SiC MOSFET/ Reel 900V, 280 mOhmMOSFET G3 SiC MOSFET 900V, 280 mOhm
ManufacturerCree, Inc.Cree, Inc.Cree, Inc.
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiCSiCSiC
Mounting StyleThrough HoleSMD/SMTSMD/SMT
Package / CaseTO-247-3TO-263-7TO-263-7
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage900 V900 V900 V
Id Continuous Drain Current11.5 A11 A11 A
Rds On Drain Source Resistance280 mOhms385 mOhms385 mOhms
Vgs th Gate Source Threshold Voltage2.1 V1.8 V1.8 V
Qg Gate Charge9.5 nC9.5 nC9.5 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation54 W50 W50 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeReelTube
Height21.1 m--
Length16.13 mm--
ProductPower MOSFETPower MOSFETPower MOSFET
TypeSilicon Carbide MOSFETSilicon Carbide MOSFETSilicon Carbide MOSFET
Width5.21 mm--
BrandWolfspeed / CreeWolfspeed / CreeWolfspeed / Cree
Fall Time7.5 ns4 ns4 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time10 ns6.5 ns6.5 ns
Factory Pack Quantity3080050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time17.5 ns11 ns11 ns
Typical Turn On Delay Time26 ns10.5 ns10.5 ns
Unit Weight1.340411 oz0.056438 oz0.056438 oz
Vgs Gate Source Voltage-18 V, - 8 V18 V, - 8 V
Forward Transconductance Min-3.1 S3.1 S
Moisture Sensitive-Yes-
Manufacturer Part # Description RFQ
N/A
N/A
C3M0280090D MOSFET G3 SiC MOSFET 900V, 280mOhm
C3M0280090J-TR MOSFET G3 SiC MOSFET/ Reel 900V, 280 mOhm
C3M0280090J MOSFET G3 SiC MOSFET 900V, 280 mOhm
C3M0280090D MOSFET N-CH 900V 11.5A
C3M0280090J MOSFET N-CH 900V 11A
C3M0280090J-TR MOSFET N-CH 900V 11A
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