 | | | |
| PartNumber | CDBGBSC20650-G | CDBGBSC101200-G | CDBGBSC201200-G |
| Description | Schottky Diodes & Rectifiers DUAL SiC POWER SCHOTTKY 20A 650V | Schottky Diodes & Rectifiers DUAL SiC POWER SCHOTTKY, 10A 1200V | Schottky Diodes & Rectifiers DUAL SiC POWER SCHOTTKY 20A 1200V |
| Manufacturer | Comchip Technology | Comchip Technology | Comchip Technology |
| Product Category | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers |
| RoHS | Y | Y | Y |
| Product | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes | Schottky Silicon Carbide Diodes |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| If Forward Current | 20 A | 10 A | 20 A |
| Vrrm Repetitive Reverse Voltage | 650 V | 1200 V | 1200 V |
| Vf Forward Voltage | 1.5 V | 1.45 V | 1.63 V |
| Ifsm Forward Surge Current | 100 A | 50 A | 100 A |
| Configuration | Dual | Dual | Dual |
| Technology | SiC | SiC | SiC |
| Ir Reverse Current | 20 uA | 20 uA | 50 uA |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Packaging | Tube | Tube | Tube |
| Brand | Comchip Technology | Comchip Technology | Comchip Technology |
| Pd Power Dissipation | 109 W | 109.5 W | 141.5 W |
| Product Type | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | Diodes & Rectifiers | Diodes & Rectifiers | Diodes & Rectifiers |
| Vr Reverse Voltage | 650 V | 1200 V | 1200 V |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Comchip Technology |
CDBGBSC20650-G | Schottky Diodes & Rectifiers DUAL SiC POWER SCHOTTKY 20A 650V | |
| CDBGBSC101200-G | Schottky Diodes & Rectifiers DUAL SiC POWER SCHOTTKY, 10A 1200V | ||
| CDBGBSC201200-G | Schottky Diodes & Rectifiers DUAL SiC POWER SCHOTTKY 20A 1200V |