CDM7-6

CDM7-650 TR13 vs CDM7-600LR TR13 vs CDM7-650

 
PartNumberCDM7-650 TR13CDM7-600LR TR13CDM7-650
DescriptionMOSFET 650V N-Ch PFC FET 30Vgs 5.0nC 1.35OhmMOSFET 600V N-Ch PFC FET 0.53Ohm 30Vgs 60W
ManufacturerCentral SemiconductorCentral SemiconductorCentral Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V600 V-
Id Continuous Drain Current7 A7 A-
Rds On Drain Source Resistance1.35 Ohms530 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge16.8 nC14.5 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation140 W60 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesCDMCDMCDM
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandCentral SemiconductorCentral Semiconductor-
Fall Time28 ns26 ns28 ns
Product TypeMOSFETMOSFET-
Rise Time28 ns26 ns28 ns
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time38 ns44 ns38 ns
Typical Turn On Delay Time14 ns9.4 ns14 ns
Part # AliasesCDM7-650 PBFREE TR13CDM7-600LR PBFREE TR13-
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Tradename-UltraMOS-
Package Case--TO-252-3
Pd Power Dissipation--140 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--7 A
Vds Drain Source Breakdown Voltage--650 V
Vgs th Gate Source Threshold Voltage--2 V
Rds On Drain Source Resistance--1.5 Ohms
Qg Gate Charge--16.8 nC
Manufacturer Part # Description RFQ
Central Semiconductor
Central Semiconductor
CDM7-650 TR13 MOSFET 650V N-Ch PFC FET 30Vgs 5.0nC 1.35Ohm
Central Semiconductor
Central Semiconductor
CDM7-600LR TR13 MOSFET 600V N-Ch PFC FET 0.53Ohm 30Vgs 60W
CDM7-600LR TR13 MOSFET N-CH 7A 600V DPAK
CDM7-650 New and Original
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