OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

CGH4012

CGH40120F vs CGH40120P vs CGH40120F-TB

 
PartNumberCGH40120FCGH40120PCGH40120F-TB
DescriptionRF JFET Transistors GaN HEMT DC-2.5GHz, 120 WattRF JFET Transistors GaN HEMT DC-2.5GHz, 120 WattBOARD DEMO AMP CIRCUIT CGH40120
ManufacturerCree, Inc.Cree, Inc.-
Product CategoryRF JFET TransistorsRF JFET Transistors-
RoHSYY-
Transistor TypeHEMT--
TechnologyGaNGaN-
Gain19 dB--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage120 V--
Vgs Gate Source Breakdown Voltage- 10 V to 2 V--
Id Continuous Drain Current12 A--
Output Power120 W--
Maximum Drain Gate Voltage---
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation---
Mounting StyleScrew Mount--
Package / Case440193--
PackagingTubeTube-
Application---
ConfigurationSingle--
Height4.19 mm--
Length20.45 mm--
Operating Frequency1 GHz to 2.5 GHz--
Operating Temperature Range---
ProductGaN HEMT--
Width5.97 mm--
BrandWolfspeed / CreeWolfspeed / Cree-
Forward Transconductance Min---
Gate Source Cutoff Voltage---
Class---
Development KitCGH40120F-TB--
Fall Time---
NF Noise Figure---
P1dB Compression Point---
Product TypeRF JFET TransistorsRF JFET Transistors-
Rds On Drain Source Resistance---
Rise Time---
Factory Pack Quantity100250-
SubcategoryTransistorsTransistors-
Typical Turn Off Delay Time---
Vgs th Gate Source Threshold Voltage- 3 V--
Manufacturer Part # Description RFQ
N/A
N/A 		CGH40120F RF JFET Transistors GaN HEMT DC-2.5GHz, 120 Watt
CGH40120P RF JFET Transistors GaN HEMT DC-2.5GHz, 120 Watt
CGH40120F-TB BOARD DEMO AMP CIRCUIT CGH40120
CGH40120F RF JFET Transistors DC-2.5GHz 28V 120W Gain 19dB GaN HEMT
CGH40120P Trans FET N-CH 84V 12A GaN HEMT
Top