PartNumber | CGHV22200F | CGHV22200-TB | CGHV22200F/P |
Description | RF MOSFET Transistors GaN HEMT 1.8-2.2GHz, 200 Watt | EVAL BOARD FOR CGHV22200 | |
Manufacturer | Cree, Inc. | - | - |
Product Category | RF MOSFET Transistors | - | - |
RoHS | Y | - | - |
Transistor Polarity | N-Channel | - | - |
Technology | GaN | - | - |
Id Continuous Drain Current | 1 A | - | - |
Vds Drain Source Breakdown Voltage | 150 V | - | - |
Gain | 18 dB | - | - |
Output Power | 200 W | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Mounting Style | Screw Mount | - | - |
Package / Case | 440162 | - | - |
Packaging | Bulk | - | - |
Operating Frequency | 1.8 GHz to 2.2 GHz | - | - |
Type | RF Power MOSFET | - | - |
Brand | Wolfspeed / Cree | - | - |
Number of Channels | 1 Channel | - | - |
Product Type | RF MOSFET Transistors | - | - |
Factory Pack Quantity | 10 | - | - |
Subcategory | MOSFETs | - | - |
Vgs Gate Source Voltage | - 10 V, 2 V | - | - |
Vgs th Gate Source Threshold Voltage | - 3 V | - | - |