PartNumber | CGHV40100F | CGHV40100F-TB | CGHV40100P |
Description | RF JFET Transistors GaN HEMT DC-4.0GHz, 100 Watt | TEST FIXTURE FOR CGHV40100F | RF MOSFET HEMT 50V 440206 |
Manufacturer | Cree, Inc. | - | - |
Product Category | RF JFET Transistors | - | - |
RoHS | Y | - | - |
Transistor Type | HEMT | - | - |
Technology | GaN | - | - |
Gain | 11 dB | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 150 V | - | - |
Vgs Gate Source Breakdown Voltage | 2.7 V | - | - |
Id Continuous Drain Current | 8.7 A | - | - |
Output Power | 100 W | - | - |
Maximum Drain Gate Voltage | - | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | - | - | - |
Mounting Style | Screw Mount | - | - |
Package / Case | 440193 | - | - |
Packaging | Tube | - | - |
Application | - | - | - |
Configuration | Single | - | - |
Height | 4.19 mm | - | - |
Length | 20.45 mm | - | - |
Operating Frequency | 500 MHz to 2.5 GHz | - | - |
Operating Temperature Range | - 40 C to + 150 C | - | - |
Product | GaN HEMT | - | - |
Width | 5.97 mm | - | - |
Brand | Wolfspeed / Cree | - | - |
Forward Transconductance Min | - | - | - |
Gate Source Cutoff Voltage | - 10 V to + 2 V | - | - |
Class | - | - | - |
Development Kit | CGHV40100-TB | - | - |
Fall Time | - | - | - |
NF Noise Figure | - | - | - |
P1dB Compression Point | - | - | - |
Product Type | RF JFET Transistors | - | - |
Rds On Drain Source Resistance | - | - | - |
Rise Time | - | - | - |
Factory Pack Quantity | 100 | - | - |
Subcategory | Transistors | - | - |
Typical Turn Off Delay Time | - | - | - |
Vgs th Gate Source Threshold Voltage | 2.3 V | - | - |