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CGHV40100F

CGHV40100F vs CGHV40100F-TB vs CGHV40100F/P

 
PartNumberCGHV40100FCGHV40100F-TBCGHV40100F/P
DescriptionRF JFET Transistors GaN HEMT DC-4.0GHz, 100 WattTEST FIXTURE FOR CGHV40100F
ManufacturerCree, Inc.--
Product CategoryRF JFET Transistors--
RoHSY--
Transistor TypeHEMT--
TechnologyGaN--
Gain11 dB--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage150 V--
Vgs Gate Source Breakdown Voltage2.7 V--
Id Continuous Drain Current8.7 A--
Output Power100 W--
Maximum Drain Gate Voltage---
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation---
Mounting StyleScrew Mount--
Package / Case440193--
PackagingTube--
Application---
ConfigurationSingle--
Height4.19 mm--
Length20.45 mm--
Operating Frequency500 MHz to 2.5 GHz--
Operating Temperature Range- 40 C to + 150 C--
ProductGaN HEMT--
Width5.97 mm--
BrandWolfspeed / Cree--
Forward Transconductance Min---
Gate Source Cutoff Voltage- 10 V to + 2 V--
Class---
Development KitCGHV40100-TB--
Fall Time---
NF Noise Figure---
P1dB Compression Point---
Product TypeRF JFET Transistors--
Rds On Drain Source Resistance---
Rise Time---
Factory Pack Quantity100--
SubcategoryTransistors--
Typical Turn Off Delay Time---
Vgs th Gate Source Threshold Voltage2.3 V--
Manufacturer Part # Description RFQ
N/A
N/A 		CGHV40100F RF JFET Transistors GaN HEMT DC-4.0GHz, 100 Watt
CGHV40100F-TB TEST FIXTURE FOR CGHV40100F
CGHV40100F RF JFET Transistors DC-3GHz 100W GaN Gain 17.5dB typ.
CGHV40100F/P New and Original
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