PartNumber | CGHV59070F | CGHV59070F-TB | CGHV59070F-AMP |
Description | RF JFET Transistors GaN HEMT 4.4-5.9GHz, 70 Watt | TEST FIXTURE FOR CGHV59070F | EVAL BOARD WITH CGHV59070F |
Manufacturer | Qorvo | - | - |
Product Category | RF JFET Transistors | - | - |
RoHS | Y | - | - |
Transistor Type | HEMT | - | - |
Technology | GaN SiC | - | - |
Gain | 19 dB | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 28 V | - | - |
Vgs Gate Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 817 mA | - | - |
Output Power | 24 W | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 85 C | - | - |
Pd Power Dissipation | 28.8 W | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | QFN-8 | - | - |
Packaging | Tray | - | - |
Configuration | Single | - | - |
Operating Frequency | 30 MHz to 1.215 GHz | - | - |
Operating Temperature Range | - 40 C to + 85 C | - | - |
Series | QPD | - | - |
Brand | Qorvo | - | - |
Development Kit | QPD1000PCB401, QPD1000PCB402 | - | - |
Moisture Sensitive | Yes | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 100 | - | - |
Subcategory | Transistors | - | - |
Vgs th Gate Source Threshold Voltage | - 2.8 V | - | - |
Part # Aliases | 1131140 | - | - |