CGHV590

CGHV59070F vs CGHV59070F-TB vs CGHV59070F-AMP

 
PartNumberCGHV59070FCGHV59070F-TBCGHV59070F-AMP
DescriptionRF JFET Transistors GaN HEMT 4.4-5.9GHz, 70 WattTEST FIXTURE FOR CGHV59070FEVAL BOARD WITH CGHV59070F
ManufacturerQorvo--
Product CategoryRF JFET Transistors--
RoHSY--
Transistor TypeHEMT--
TechnologyGaN SiC--
Gain19 dB--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage28 V--
Vgs Gate Source Breakdown Voltage100 V--
Id Continuous Drain Current817 mA--
Output Power24 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 85 C--
Pd Power Dissipation28.8 W--
Mounting StyleSMD/SMT--
Package / CaseQFN-8--
PackagingTray--
ConfigurationSingle--
Operating Frequency30 MHz to 1.215 GHz--
Operating Temperature Range- 40 C to + 85 C--
SeriesQPD--
BrandQorvo--
Development KitQPD1000PCB401, QPD1000PCB402--
Moisture SensitiveYes--
Product TypeRF JFET Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
Vgs th Gate Source Threshold Voltage- 2.8 V--
Part # Aliases1131140--
Manufacturer Part # Description RFQ
N/A
N/A
CGHV59070F RF JFET Transistors GaN HEMT 4.4-5.9GHz, 70 Watt
CGHV59070F RF MOSFET HEMT 50V 440224
CGHV59070F-TB TEST FIXTURE FOR CGHV59070F
CGHV59070F-AMP EVAL BOARD WITH CGHV59070F
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