PartNumber | CGHV60075D5 | CGHV60075D5-GP4 | CGHV60075D |
Description | RF JFET Transistors GaN HEMT Die DC-6.0GHz, 75 Watt | RF POWER TRANSISTOR | RF JFET Transistors 6.0GHz 75 Watt GaN Gain 17dB typ. 50V |
Manufacturer | Qorvo | - | Wolfspeed / Cree |
Product Category | RF JFET Transistors | - | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Transistor Type | HEMT | - | HEMT |
Technology | GaN SiC | - | GaN SiC |
Gain | 16 dB | - | 17 dB |
Transistor Polarity | N-Channel | - | N-Channel |
Output Power | 30 W | - | 75 W |
Packaging | Tray | - | Gel Pack |
Operating Frequency | 3.5 GHz | - | 6 GHz |
Series | T2G | - | - |
Type | GaN SiC HEMT | - | - |
Brand | Qorvo | - | - |
Moisture Sensitive | Yes | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 36 | - | - |
Subcategory | Transistors | - | - |
Part # Aliases | 1099983 | - | - |
Mounting Style | - | - | SMD/SMT |
Operating Temperature Range | - | - | - |
Package Case | - | - | Die |
Configuration | - | - | - |
Class | - | - | - |
Pd Power Dissipation | - | - | 41.6 W |
Maximum Operating Temperature | - | - | - |
Minimum Operating Temperature | - | - | - |
Application | - | - | - |
Id Continuous Drain Current | - | - | 10 A |
Vds Drain Source Breakdown Voltage | - | - | 150 V |
Vgs th Gate Source Threshold Voltage | - | - | - 10 V + 2 V |
Rds On Drain Source Resistance | - | - | 0.28 Ohm |
Forward Transconductance Min | - | - | - |
Development Kit | - | - | - |
Vgs Gate Source Breakdown Voltage | - | - | 150 V |
Gate Source Cutoff Voltage | - | - | - |
Maximum Drain Gate Voltage | - | - | - |
NF Noise Figure | - | - | - |
P1dB Compression Point | - | - | - |