CPH6350

CPH6350-TL-E vs CPH6350-TL-EX vs CPH6350-P-TL-E

 
PartNumberCPH6350-TL-ECPH6350-TL-EXCPH6350-P-TL-E
DescriptionMOSFET SWITCHING DEVICEINTEGRATED CIRCUITIGBT Transistors MOSFET
ManufacturerON Semiconductor-ON Semiconductor
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT--
Package / CaseSOT-26-6--
Number of Channels1 Channel-1 Channel
Transistor PolarityP-Channel-P-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current6 A--
Rds On Drain Source Resistance43 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge13 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.6 W--
ConfigurationSingle--
PackagingReel--
SeriesCPH6350-CPH6350-P-TL-E
Transistor Type1 P-Channel-1 P-Channel
BrandON Semiconductor--
Fall Time45 ns--
Product TypeMOSFET--
Rise Time27 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time62 ns--
Typical Turn On Delay Time7.4 ns--
Unit Weight0.000536 oz--
Package Case--SOT-26-6
Id Continuous Drain Current--- 6 A
Vds Drain Source Breakdown Voltage--- 30 V
Rds On Drain Source Resistance--43 mOhms
Manufacturer Part # Description RFQ
CPH6350-TL-W MOSFET P-CH Pwr MOSFET 30V 6A 43 mOhm
CPH6350-TL-E MOSFET SWITCHING DEVICE
ON Semiconductor
ON Semiconductor
CPH6350-TL-E MOSFET P-CH 30V 6A CPH6
CPH6350-TL-EX INTEGRATED CIRCUIT
CPH6350-TL-W IGBT Transistors MOSFET P-CH Pwr MOSFET 30V 6A 43 mOhm
CPH6350-P-TL-E IGBT Transistors MOSFET
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