CSD16322Q

CSD16322Q5 vs CSD16322Q5A vs CSD16322Q5C

 
PartNumberCSD16322Q5CSD16322Q5ACSD16322Q5C
DescriptionMOSFET N-Channel NexFET Pwr MOSFETsTrans MOSFET N-CH 25V 21A 8-Pin VSON-CLIP EP T/R
ManufacturerTexas Instruments-TI/BB
Product CategoryMOSFET-IC Chips
RoHSE--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseVSON-Clip-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance5.8 mOhms--
Vgs th Gate Source Threshold Voltage1.1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge6.8 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation3.1 W--
ConfigurationSingle-Single
TradenameNexFET-NexFET
PackagingReel-Reel
Height1 mm--
Length6 mm--
SeriesCSD16322Q5-CSD16322Q5C
Transistor Type1 N-Channel-1 N-Channel
Width5 mm--
BrandTexas Instruments--
Forward Transconductance Min106 S--
Fall Time3.7 ns-3.7 ns
Product TypeMOSFET--
Rise Time10.7 ns-10.7 ns
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time12.3 ns-12.3 ns
Typical Turn On Delay Time6.1 ns-6.1 ns
Unit Weight0.003891 oz--
Package Case--VSON-Clip-8
Pd Power Dissipation--3.1 W
Vgs Gate Source Voltage--10 V
Id Continuous Drain Current--21 A
Vds Drain Source Breakdown Voltage--25 V
Vgs th Gate Source Threshold Voltage--1.1 V
Rds On Drain Source Resistance--5.8 mOhms
Qg Gate Charge--6.8 nC
Forward Transconductance Min--106 S
Manufacturer Part # Description RFQ
Texas Instruments
Texas Instruments
CSD16322Q5 MOSFET N-Channel NexFET Pwr MOSFETs
CSD16322Q5A New and Original
CSD16322Q5 MOSFET N-CH 25V 5X6 8SON
CSD16322Q5C Trans MOSFET N-CH 25V 21A 8-Pin VSON-CLIP EP T/R
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